EFFECT OF ADSORBATES ON THE TRAPPING PROPERTIES IN HYDROGENATED AMORPHOUS-SILICON FILMS

被引：6

作者：

YAMAGUCHI, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 11期

关键词：

D O I：

10.1143/JJAP.21.L664

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L664 / L666

页数：3

共 14 条

[1] ATTEMPTS TO MEASURE THERMALLY STIMULATED CURRENTS IN CHALCOGENIDE GLASSES [J].

AGARWAL, SC ;

FRITZSCHE, H .

PHYSICAL REVIEW B, 1974, 10 (10) :4351-4357

[2]

Bube R.H., 1960, PHOTOCONDUCTIVITY SO

[3] THERMALLY STIMULATED CURRENTS IN AMORPHOUS-SILICON [J].

FUHS, W ;

MILLEVILLE, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 98 (01) :K29-K32

[4] SLOW SURFACE STATES AND CHEMISORPTION [J].

JANTSCH, O .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (08) :1233-+

[5]

Kolomiets B. T., 1970, Journal of Non-Crystalline Solids, V3, P46, DOI 10.1016/0022-3093(70)90105-5

[6]

PERSANS P, 1980, B AM PHYS SOC, V25, P330

[7] THE PHOSPHORESCENCE OF VARIOUS SOLIDS [J].

RANDALL, JT ;

WILKINS, MHF .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1945, 184 (999) :347-&

[8] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS [J].

SOLOMON, I ;

DIETL, T ;

KAPLAN, D .

JOURNAL DE PHYSIQUE, 1978, 39 (11) :1241-1246

[9] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294

[10] EFFECT OF ADSORBATES AND INSULATING LAYERS ON THE CONDUCTANCE OF PLASMA DEPOSITED A-SI-H [J].

TANIELIAN, M ;

CHATANI, M ;

FRITZSCHE, H ;

SMID, V ;

PERSANS, PD .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :575-580

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