COMPOSITIONALLY GRADED HGCDTE PHOTODIODES - PREDICTION OF SPECTRAL RESPONSE FROM TRANSMISSION SPECTRUM AND THE IMPACT OF GRADING

被引:24
作者
ROSENFELD, D
GARBER, V
ARIEL, V
BAHIR, G
机构
[1] Department of Electrical Engineering, Kidron Microelectronics Research Center, Haifa, 32000, Technion - I.I.T.
关键词
COMPOSITIONAL GRADING; HGCDTE; INFRARED (IR) TRANSMISSION; PHOTODIODES; SPECTRAL RESPONSE;
D O I
10.1007/BF02653091
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have studied the infrared transmission spectrum and the optical performance of HgCdTe photodiodes containing a linear composition gradient in the active layer. Our objectives were to enable the prediction of the optical performance of a photodiode at 77K, based on the easily and nondestructively measured transmission spectra, as well as to gain a better understanding of the effects of the grading on the optical performance. Consequently, we address three issues here. We first establish improved characterization techniques that can provide accurate values of the necessary material parameters such as gradient in composition. Second, we present a model that can predict the optical response of a diode, based oil the material properties and the diode's geometry. Third, we use the above-mentioned model for the theoretical calculations of the effects of the grading and the resulting built-in electric field on the diode's optical response.
引用
收藏
页码:1321 / 1328
页数:8
相关论文
共 22 条
[1]  
ARIAS JM, 1993, J ELECTRON MATER, V22, P1039
[2]  
ARIEL V, UNPUB APPL PHYS LETT
[3]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[4]   LIQUID-PHASE EPITAXIAL-GROWTH OF LARGE AREA HG1-XCDXTE EPITAXIAL LAYERS [J].
EDWALL, DD ;
GERTNER, ER ;
TENNANT, WE .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) :1453-1460
[6]   THE EXPONENTIAL OPTICAL-ABSORPTION BAND TAIL OF HG1-XCDXTE [J].
FINKMAN, E ;
SCHACHAM, SE .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2896-2900
[7]   MODEL FOR INFRARED-ABSORPTION AND TRANSMISSION OF LIQUID-PHASE EPITAXY HGCDTE [J].
HOUGEN, CA .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (08) :3763-3766
[8]  
Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11
[9]  
IRWINE SJC, 1992, SPIE, V1735, P92
[10]  
JOHANSON SM, 1992, J VAC SCI TECHNOL B, V10, P1499