STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES

被引：438

作者：

ABSTREITER, G ^{[1
]}

BRUGGER, H ^{[1
]}

WOLF, T ^{[1
]}

JORKE, H ^{[1
]}

HERZOG, HJ ^{[1
]}

机构：

[1] CLAREMONT MCKENNA COLL,FORSCHUNGSINST,CLAREMONT,CA 91711

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 54卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.54.2441

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2441 / 2444

页数：4

共 18 条

[1]

ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480

[2] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].

ANASTASSAKIS, E ;

PINCZUK, A ;

BURSTEIN, E ;

POLLAK, FH ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1970, 8 (02) :133-+

[3] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J].

BALSLEV, I .

PHYSICAL REVIEW, 1966, 143 (02) :636-&

[4] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

SHENG, TT ;

FELDMAN, LC ;

FIORY, AT ;

LYNCH, RT .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :102-104

[5] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[6] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J].

BRAUNSTEIN, R ;

MOORE, AR ;

HERMAN, F .

PHYSICAL REVIEW, 1958, 109 (03) :695-710

[7] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J].

CERDEIRA, F ;

PINCZUK, A ;

BEAN, JC ;

BATLOGG, B ;

WILSON, BA .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1138-1140

[8] EFFECTS OF INTERBAND EXCITATIONS ON RAMAN PHONONS IN HEAVILY DOPED N-SI [J].

CHANDRASEKHAR, M ;

RENUCCI, JB ;

CARDONA, M .

PHYSICAL REVIEW B, 1978, 17 (04) :1623-1633

[9]

JORKE H, 1985, UNPUB P INT S SI MOL

[10]

KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144

← 1 2 →