PROPERTIES OF PURE SILICON AMORPHOUS FILMS PREPARED BY RF-BIAS SPUTTERING

被引：4

作者：

SUZUKI, M ^{[1
]}

MAEKAWA, T ^{[1
]}

KAKIMOTO, Y ^{[1
]}

BANDOW, T ^{[1
]}

机构：

[1] ISHIKAWA TECH COLL,TSUBATA 92903,JAPAN

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814136

中图分类号：

学科分类号：

摘要：

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页码：623 / 626

页数：4

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