NONLINEAR LANDAU ABSORPTION IN III-V-SEMICONDUCTORS NEAR THE FUNDAMENTAL ABSORPTION-EDGE

被引:10
作者
SEN, PK
机构
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 06期
关键词
D O I
10.1103/PhysRevB.33.4038
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4038 / 4043
页数:6
相关论文
共 17 条
[1]  
Bowden C M, 1981, OPTICAL BISTABILITY
[2]   4-WAVE MIXING AND PHASE CONJUGATION NEAR THE BAND EDGE [J].
ELCI, A ;
ROGOVIN, D .
PHYSICAL REVIEW B, 1981, 24 (10) :5796-5805
[3]   INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].
ELLIOTT, RJ .
PHYSICAL REVIEW, 1957, 108 (06) :1384-1389
[4]   THEORY OF THE EFFECT OF A MAGNETIC FIELD ON THE ABSORPTION EDGE IN SEMICONDUCTORS [J].
ELLIOTT, RJ ;
MCLEAN, TP ;
MACFARLANE, GG .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (466) :553-565
[5]   OPTICAL BISTABILITY IN SEMICONDUCTORS [J].
GIBBS, HM ;
MCCALL, SL ;
VENKATESAN, TNC ;
GOSSARD, AC ;
PASSNER, A ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1979, 35 (06) :451-453
[6]  
HAUG H, COMMUNICATION
[7]  
KANSKAYA LM, 1981, SOV PHYS SEMICOND+, V15, P1079
[8]  
KANSKAYA LM, 1979, FIZ TEKH POLUPROV, V13, P2424
[9]  
LETOKHOV VS, 1977, NONLINEAR LASER SPEC, P74
[10]  
Loudon R., 1973, QUANTUM THEORY LIGHT, P102