ELECTRONIC-STRUCTURE OF GE IN SIO2

被引：6

作者：

HAGON, JP ^{[1
]}

JAROS, M ^{[1
]}

STONEHAM, AM ^{[1
]}

机构：

[1] AERE,DIV THEORET PHYS,HARWELL OX11 0RA,OXON,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 25期

关键词：

D O I：

10.1088/0022-3719/18/25/014

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4957 / 4962

页数：6

共 15 条

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