FERROELECTRIC MATERIALS FOR 64 MB AND 256 MB DRAMS

被引:221
作者
PARKER, LH
TASCH, AF
机构
[1] Electrical Engineering, University of Texas, Austin
来源
IEEE CIRCUITS AND DEVICES MAGAZINE | 1990年 / 6卷 / 01期
关键词
D O I
10.1109/101.47582
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Storing enough charge on the capacitors in the memory cells of ULSI DRAMs will require materials with much higher relative dielectric constants than those being used today. Some ferroelectric materials look promising. © 1990, IEEE. All rights reserved.
引用
收藏
页码:17 / 26
页数:10
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