THE PROPERTIES OF SI/SI1-XGEX FILMS GROWN ON SI SUBSTRATES BY CHEMICAL VAPOR-DEPOSITION

被引：14
作者：
MANASEVIT, HM
GERGIS, IS
JONES, AB
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 04期
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D O I：
10.1007/BF02676793
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：637 / 651
页数：15
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