1ST PHASE NUCLEATION IN SILICON-TRANSITION-METAL PLANAR INTERFACES

被引：413

作者：

WALSER, RM ^{[1
]}

BENE, RW ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT ELECT ENGN,ELECTR RECH CTR,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 10期

关键词：

D O I：

10.1063/1.88590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：624 / 625

页数：2

共 12 条

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[9] ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY-DIFFRACTION [J].

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