STATE DENSITY AND INTERBAND ABSORPTION OF LIGHT IN HEAVILY DOPED SEMICONDUCTORS

被引：0

作者：

EFROS, AL ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST, LENINGRAD, USSR

来源：

USPEKHI FIZICHESKIKH NAUK | 1973年 / 111卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：451 / 482

页数：32

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