DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE LAYER

被引：65

作者：

GROVE, AS

LEISTIKO, O

SAH, CT

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1964年 / 25卷 / 09期

关键词：

D O I：

10.1016/0022-3697(64)90036-8

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：985 / &

共 14 条

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[9] DIFFUSION OF GALLIUM IN SILICON [J].

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GRAVEL, CL .

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[10]

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