EFFECT OF GROWTH PARAMETERS ON FORMATION AND ELIMINATION OF VACANCY CLUSTERS IN DISLOCATION-FREE SILICON-CRYSTALS

被引：46

作者：

DEKOCK, AJR ^{[1
]}

ROKSNOER, PJ ^{[1
]}

BOONEN, PGT ^{[1
]}

机构：

[1] PHILIPS RES LABS, EINDHOVEN, NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 22卷 / 04期

关键词：

D O I：

10.1016/0022-0248(74)90176-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：311 / 320

页数：10

共 28 条

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[3]

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[4]

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FAINSTEIN, D .

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ASAEDA, Y ;

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[7] NON-CYLINDRICAL GROWTH HABIT OF FLOAT ZONED DISLOCATION-FREE [111] SILICON CRYSTALS [J].

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JOURNAL OF CRYSTAL GROWTH, 1971, 10 (03) :263-&

[8]

CISZEK TF, 1973, SEMICONDUCTOR SILICO, P150

[9] ANNEALING BEHAVIOR AND ETCHING PHENOMENA OF MICRODEFECTS IN DISLOCATION-FREE FLOAT-ZONE SILICON [J].

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[10]

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