THE EFFECT OF TRIMETHYLALUMINUM CONCENTRATION ON THE INCORPORATION OF P IN ALXGA1-XPYAS1-Y GROWN BY ORGANO-METALLIC VAPOR-PHASE EPITAXY

被引：36
作者：
LUDOWISE, MJ
DIETZE, WT
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 01期
关键词：
D O I：
10.1007/BF02654609
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：59 / 73
页数：15
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共 12 条
[1]  
AEBI V, UNPUB J CRYS GROWTH
[2]   ALXGA1-XAS1-Y'PY'-GAAS1-YPY HETEROSTRUCTURE LASER AND LAMP JUNCTIONS [J].
BURNHAM, RD ;
HOLONYAK, N ;
SCIFRES, DR .
APPLIED PHYSICS LETTERS, 1970, 17 (10) :455-&
[3]   DOUBLE HETEROJUNCTION ALGAASP QUATERNARY LASERS [J].
BURNHAM, RD ;
HOLONYAK, N ;
KORB, HW ;
MACKSEY, HM ;
SCIFRES, DR ;
WOODHOUSE, JB ;
ALFEROV, ZI .
APPLIED PHYSICS LETTERS, 1971, 19 (02) :25-+
[4]   ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC [J].
COOPER, CB ;
LUDOWISE, MJ ;
AEBI, V ;
MOON, RL .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) :299-309
[5]  
DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1
[6]   VAPOR GROWTH OF GAAS1-XPX BY PYROLYSIS OF GA(CH3)3, ASH3 AND PH3 [J].
INOUE, M ;
ASAHI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (06) :919-&
[7]  
MOON RL, 1979, 7TH INT S GAAS REL C, P78
[8]   ORGANO-METALLIC-SOURCED VPE ALGAAS-GAAS CONCENTRATOR SOLAR-CELLS HAVING CONVERSION EFFICIENCIES OF 19-PERCENT [J].
NELSON, NJ ;
JOHNSON, KK ;
MOON, RL ;
VANDERPLAS, HA ;
JAMES, LW .
APPLIED PHYSICS LETTERS, 1978, 33 (01) :26-27
[9]   ASYMMETRIC CRACKING IN III-V COMPOUNDS [J].
OLSEN, GH ;
ABRAHAMS, MS ;
ZAMEROWSKI, TJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1650-1656
[10]   STRESS COMPENSATION IN GA1-XALXAS1-YPY LPE LAYERS ON GAAS SUBSTRATES [J].
ROZGONYI, GA ;
PANISH, MB .
APPLIED PHYSICS LETTERS, 1973, 23 (10) :533-535
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