GENERATION OF POSITIVE CHARGE IN SILICON DIOXIDE DURING AVALANCHE AND TUNNEL ELECTRON INJECTION

[11] DoThanh L., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P16

[12] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94

[13] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (03) : 225 - 229

[14] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682

[15] POSITIVE CHARGE EFFECTS ON THE FLAT-BAND VOLTAGE SHIFT DURING AVALANCHE INJECTION ON AL-SIO2-SI CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3129 - 3135

[16] THE EFFECT OF GATE METAL AND SIO2 THICKNESS ON THE GENERATION OF DONOR STATES AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 418 - 425

[17] SLOW AND FAST STATES INDUCED BY HOT-ELECTRONS AT SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3136 - 3144

[18] HOT-ELECTRON-INDUCED DEFECTS AT THE SI-SIO2 INTERFACE AT HIGH FIELDS AT 295-K AND 77-K [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2854 - 2859

[19] FISCHETTI MV, UNPUB PHYS REV B

[20] THE MECHANISM OF GROWTH OF QUARTZ CRYSTALS INTO FUSED-SILICA [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6160 - 6164

[11] DoThanh L., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P16

[12] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94

[13] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (03) : 225 - 229

[14] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682

[15] POSITIVE CHARGE EFFECTS ON THE FLAT-BAND VOLTAGE SHIFT DURING AVALANCHE INJECTION ON AL-SIO2-SI CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3129 - 3135

[16] THE EFFECT OF GATE METAL AND SIO2 THICKNESS ON THE GENERATION OF DONOR STATES AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 418 - 425

[17] SLOW AND FAST STATES INDUCED BY HOT-ELECTRONS AT SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3136 - 3144

[18] HOT-ELECTRON-INDUCED DEFECTS AT THE SI-SIO2 INTERFACE AT HIGH FIELDS AT 295-K AND 77-K [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2854 - 2859

[19] FISCHETTI MV, UNPUB PHYS REV B

[20] THE MECHANISM OF GROWTH OF QUARTZ CRYSTALS INTO FUSED-SILICA [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6160 - 6164