GENERATION OF POSITIVE CHARGE IN SILICON DIOXIDE DURING AVALANCHE AND TUNNEL ELECTRON INJECTION

被引：136
作者：
FISCHETTI, MV
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期
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D O I：
10.1063/1.335223
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：2860 / 2879
页数：20
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