GENERATION OF POSITIVE CHARGE IN SILICON DIOXIDE DURING AVALANCHE AND TUNNEL ELECTRON INJECTION

[1] AITKEN JM, 1976, IEEE T NUCL SCI, V23, P1526, DOI 10.1109/TNS.1976.4328533

[2] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[3] CURRENT INDUCED TRAP GENERATION IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 396 - 398

[4] ULTRAVIOLET BLEACHING AND REGENERATION OF SI=SI3 CENTERS AT THE SI/SIO2 INTERFACE OF THINLY OXIDIZED SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 541 - 545

[5] Chang C., 1983, International Electron Devices Meeting 1983. Technical Digest, P194

[6] CHENG MC, 1983, MAR APS M LOS ANG

[7] A MODEL FOR FIELD-SENSITIVE INTERFACE STATES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6919 - 6926

[8] ELECTRON TRAPPING AND DETRAPPING CHARACTERISTICS OF ARSENIC-IMPLANTED SIO2 LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1085 - 1101

[9] HOLE TRAPPING IN THE BULK OF SIO2 LAYERS AT ROOM-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 532 - 539

[10] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906

[1] AITKEN JM, 1976, IEEE T NUCL SCI, V23, P1526, DOI 10.1109/TNS.1976.4328533

[2] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[3] CURRENT INDUCED TRAP GENERATION IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 396 - 398

[4] ULTRAVIOLET BLEACHING AND REGENERATION OF SI=SI3 CENTERS AT THE SI/SIO2 INTERFACE OF THINLY OXIDIZED SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 541 - 545

[5] Chang C., 1983, International Electron Devices Meeting 1983. Technical Digest, P194

[6] CHENG MC, 1983, MAR APS M LOS ANG

[7] A MODEL FOR FIELD-SENSITIVE INTERFACE STATES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6919 - 6926

[8] ELECTRON TRAPPING AND DETRAPPING CHARACTERISTICS OF ARSENIC-IMPLANTED SIO2 LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1085 - 1101

[9] HOLE TRAPPING IN THE BULK OF SIO2 LAYERS AT ROOM-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 532 - 539

[10] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906