INVESTIGATION OF CRYSTALLOGRAPHIC PROPERTIES OF THIN GERMANIUM-CRYSTALS GROWN ON SILICON SUBSTRATES BY CHEMICAL VAPOR-DEPOSITION

被引：9

作者：

AHARONI, H ^{[1
]}

DUREMBERGOVA, D ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91103

来源：

THIN SOLID FILMS | 1983年 / 102卷 / 04期

关键词：

D O I：

10.1016/0040-6090(83)90050-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：327 / 343

页数：17

共 14 条

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BARLEV, A .

VACUUM, 1974, 24 (02) :89-93

[2] DEFECTS IN EPITAXIAL LAYERS OF SILICON-GERMANIUM GROWN ON SILICON SUBSTRATES [J].

AHARONI, H ;

BARLEV, A ;

MARGALIT, S .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :254-&

[3] MEASUREMENT OF THE LATTICE-CONSTANT OF SI-GE HETEROEPITAXIAL LAYERS GROWN ON A SILICON SUBSTRATE [J].

AHARONI, H .

VACUUM, 1978, 28 (12) :571-578

[4] EPITAXIAL-GROWTH OF SILICON-GERMANIUM SINGLE-CRYSTALS [J].

AHARONI, H ;

BARLEV, A ;

BLECH, IA ;

MARGALIT, S .

THIN SOLID FILMS, 1972, 11 (02) :313-&

[5]

AHARONI H, 1977, ISR J TECHNOL, V14

[6]

DUMIN DJ, 1970, J ELECTROCHEM SO JAN, P95

[7]

DUMIN DJ, 1970, RCA REV DEC, P620

[8] SILICON-GERMANIUM ALLOY GROWTH-CONTROL AND CHARACTERIZATION [J].

HALBERG, LI ;

NEVIN, JH .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :779-793

[9]

KLUG HP, 1954, XRAY DIFFRACTION PRO, P238

[10]

Milnes AG, 1972, HETEROJUNCTIONS META

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