Phosphorus profile optimization for conventional crystalline silicon solar cells emitters

The basic mechanisms of dopauts diffusion in silicon are translated from Fick's laws. Their resolutions led us to determine the distribution of impurities versus time. This distribution is described mathematically by a Complementary Error Function in a first step and a Gaussian redistribution in a second time. The best approach is designed using a numerical analysis and simulation. To do this, we are interested in simulating the phosphorus diffusion by the Silvaco Simulation Code. The first results obtained led us to initiate a reflection on the influence of diffusion parameters on the electrical characteristics of solar cells. Thus, various simulations were conducted to show the influence of temperature and diffusion time on the shape of diffusion profiles, and this while maintaining a surface concentration of phosphorus in constant close to the solubility limit of this dopant in silicon. Controlling the formation of emitters by the variation of the diffusion parameters is therefore an effective way to improve the quality of emitters and an opportunity to increase the performance of mc-Si conventional solar cells by about 2.5%. absolute.