SILICON ON INSULATORS - DIFFERENT APPROACHES - A REVIEW

[1] ALEXANDER EG, 1966, T METALL SOC AIME, V236, P284

[2] LASER CRYSTALLIZATION OF THIN SI FILMS ON AMORPHOUS INSULATING SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 429 - 444

[3] NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 194 - 202

[4] USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 346 - 347

[5] STACKED TRANSISTORS CMOS (ST-MOS), AN NMOS TECHNOLOGY MODIFIED TO CMOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 585 - 589

[6] GRAPHITE-STRIP-HEATER ZONE-MELTING RECRYSTALLIZATION OF SI FILMS [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 453 - 483

[7] EPITAXIAL-GROWTH OF SI DEPOSITED ON (100) SI [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 909 - 911

[8] CRYSTALLINE QUALITY OF SILICON LAYER FORMED BY FIPOS TECHNOLOGY [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 547 - 553

[9] MULTIPLE SOI STRUCTURE FABRICATED BY HIGH-DOSE OXYGEN IMPLANTATION AND EPITAXIAL-GROWTH [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : L909 - L912

[10] IZUMI K, 1982 S VLSI TECHN KA, P10

[1] ALEXANDER EG, 1966, T METALL SOC AIME, V236, P284

[2] LASER CRYSTALLIZATION OF THIN SI FILMS ON AMORPHOUS INSULATING SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 429 - 444

[3] NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 194 - 202

[4] USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 346 - 347

[5] STACKED TRANSISTORS CMOS (ST-MOS), AN NMOS TECHNOLOGY MODIFIED TO CMOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 585 - 589

[6] GRAPHITE-STRIP-HEATER ZONE-MELTING RECRYSTALLIZATION OF SI FILMS [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 453 - 483

[7] EPITAXIAL-GROWTH OF SI DEPOSITED ON (100) SI [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 909 - 911

[8] CRYSTALLINE QUALITY OF SILICON LAYER FORMED BY FIPOS TECHNOLOGY [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 547 - 553

[9] MULTIPLE SOI STRUCTURE FABRICATED BY HIGH-DOSE OXYGEN IMPLANTATION AND EPITAXIAL-GROWTH [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : L909 - L912

[10] IZUMI K, 1982 S VLSI TECHN KA, P10