SUPPRESSION OF OXIDATION INDUCED STACKING-FAULTS IN SILICON

被引：0

作者：

HERRING, RG ^{[1
]}

机构：

[1] GALAMAR IND,PALO ALTO,CA 94303

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1976年 / 5卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：449 / 449

页数：1

共 50 条

[21] INCREMENTAL DEPTH PROFILE STUDIES ON OXIDATION-INDUCED STACKING-FAULTS IN SILICON
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C365 - C365
[22] REDUCTION OF N-100 OXIDATION INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON
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[23] LASER-ENHANCED NUCLEATION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
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[24] CIRCULAR STACKING-FAULTS IN SILICON
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[25] MAPPING OF OXIDATION STACKING-FAULTS IN CZOCHRALSKI SILICON-WAFERS
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[26] ROLE OF OXYGEN IN COPPER PRECIPITATION AT OXIDATION STACKING-FAULTS IN SILICON
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[27] OXIDATION STACKING-FAULTS IN LARGE DIAMETER CZ-SILICON
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[28] INFLUENCE OF FLUORINE ON OXIDATION-INDUCED STACKING-FAULTS
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[29] INFLUENCE OF ANNEALING AMBIENT ON THE SHRINKAGE KINETICS OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
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[30] SURFACE VERSUS BULK NUCLEATED OXIDATION-INDUCED STACKING-FAULTS IN SILICON WAFERS
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