SUPPRESSION OF OXIDATION INDUCED STACKING-FAULTS IN SILICON

被引：0

作者：

HERRING, RG ^{[1
]}

机构：

[1] GALAMAR IND,PALO ALTO,CA 94303

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1976年 / 5卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：449 / 449

页数：1

共 50 条

[1] SUPPRESSION MECHANISMS FOR OXIDATION STACKING-FAULTS IN SILICON ON INSULATOR
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[2] SUPPRESSION OF OXIDATION STACKING-FAULTS IN SILICON SEPARATION BY OXYGEN
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[3] ANNIHILATION OF OXIDATION INDUCED STACKING-FAULTS IN SILICON
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[4] INFLUENCE OF TRICHLOROETHYLENE ON SUPPRESSION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON WAFERS
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[5] GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON
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[6] TCE OXIDATION FOR THE ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
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[7] DENSITY OF OXIDATION-INDUCED STACKING-FAULTS IN DAMAGED SILICON
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[8] ELIMINATION OF STACKING-FAULTS IN SILICON BY TRICHLOROETHYLENE OXIDATION
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[9] FORMATION OF STACKING-FAULTS IN SELECTIVE OXIDATION OF SILICON
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[10] OXIDATION OF SILICON WITHOUT FORMATION OF STACKING-FAULTS
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