2-LAYER MICROWAVE FET STRUCTURE FOR IMPROVED CHARACTERISTICS

被引：16

作者：

DAS, MB ^{[1
]}

ESQUEDA, P ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802

来源：

关键词：

D O I：

10.1109/T-ED.1977.18817

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：757 / 761

页数：5

相关论文

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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +
[3] SIMPLIFIED COMPUTER-AIDED ANALYSIS OF DOUBLE-DIFFUSED TRANSISTORS INCLUDING 2-DIMENSIONAL HIGH-LEVEL EFFECTS
ROULSTON, DJ
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 809 - &