A NONEQUILIBRIUM ONE-DIMENSIONAL QUANTUM-MECHANICAL SIMULATION FOR ALGAAS/GAAS HEMT STRUCTURES

被引：8

作者：

TAKANO, C

YU, ZP

DUTTON, RW

机构：

[1] Integrated Circuits Laboratory, Stanford University, Stanford, CA

[2] Sony Corporation Research Center, Yokohama

[3] Integrated Circuits Laboratory, Stanford University, Stanford

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1990年 / 9卷 / 11期

关键词：

Band Structure - Diffusion - Mathematical Models - Quantum Theory - Semiconductor Materials - Charge Carriers;

D O I：

10.1109/43.62759

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A novel but accurate method for simulating nonequilibrium gate current and sheet carrier concentration in AlGaAs/GaAs HEMT structures is reported. The calculation is based upon self-consistent solving of Schrödinger's equation, Poisson's equation, and continuity equations. A new concept for three-dimensional electrons accompanied by two-dimensional electrons in a quantum well at a heterointerface makes it possible to solve the continuity equation at the quantum well region. Thermionic emission theory is applied for the current expression across an abrupt hetero-interface. As a result, there is a certain voltage drop across the hetero-interface, which helps prevent the creation of the neutral region in the AIGaAs layer. Simulated results explain measured gate current and channel conductance characteristics of a HEMT structure. © 1990 IEEE

引用

页码：1217 / 1224

页数：8

共 24 条

[1] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .1. SUBBAND STRUCTURE AND LIGHT-SCATTERING SPECTRA [J].