INSITU OBSERVATION OF RESISTIVITY OSCILLATION AT THE TI INSULATOR INTERFACE

The resistivity of a very thin Ti film was shown to have oscillating characteristics which were dependent on the film thickness at room temperature. These resistivity oscillations were previously reported as a QSE, and found to occur at very low temperatures. Reasons for the oscillations, e.g., gas adsorption, film structure changes, as well as CSE were investigated, with experimental results showing there was no relationship between these factors and the resistivity oscillation phenomenon. The film's surface condition, i.e., its roughness, was determined to have a slight relationship to the oscillations, thus these oscillation modes are considered to be a new conduction phenomenon in room temperature thin films.