EFFECTS OF ANNEALING ON THE STRUCTURAL-PROPERTIES OF GAAS ON SI(100) GROWN AT A LOW-TEMPERATURE BY MIGRATION-ENHANCED EPITAXY

被引：18

作者：

NOZAWA, K

HORIKOSHI, Y

机构：

[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 04期

关键词：

Annealing; Dislocation density; GaAs/Si; Heteroepitaxy; Low-temperature growth; MEE; TEM;

D O I：

10.1143/JJAP.29.L540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports the effects of annealing on the structural properties of GaAs on Si(100) grown at a low temperature by migration-enhanced epitaxy (MEE). Low-temperature MEE growth at 300°C followed by brief postgrowth annealing at 580°C produces better-quality crystals than conventional high-temperature growth. A 6 µm-thick sample produced using this method showed an X-ray diffraction FWHM of 123 arcsec with an etch-pit density of 4×105cm-2. This indicates that low-temperature MEE growth can significantly reduce the dislocation density in the GaAs epilayer compared to the conventional two-step growth technique. © 1990 IOP Publishing Ltd.

引用

页码：L540 / L543

页数：4

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