ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF (ALXGA1-X)0.5IN0.5P AND ITS HETEROSTRUCTURES

被引：37

作者：

BOUR, DP ^{[1
]}

SHEALY, JR ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 09期

关键词：

ELECTROOPTICAL EFFECTS - PHOTOLUMINESCENCE -- Measurements - SEMICONDUCTING ALUMINUM COMPOUNDS -- Growth - SPECTROSCOPY; RAMAN; -; SURFACES; --; Morphology;

D O I：

10.1109/3.7127

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low pressure organometallic vapor-phase epitaxial growth of Ga0 .5In0.5P and (AlxGa1-x)0.5P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electrorefluctance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidh but cracked surfaces due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three mode structure, with spectral peaks due to GaP-like, InP-like, and AIP-like LO phonons. Heterostructures are investigated including quantum shifts from a series of superlattices. These materials are incorporated in double-heterostructure lasers and single-quantum-well laser with graded-index separate confinement heterostructure.

引用

页码：1856 / 1863

页数：8

共 28 条

[1] ELECTROREFLECTANCE AND BAND-STRUCTURE OF GAXIN1-XP ALLOYS [J].