A MOLECULAR CLUSTER STUDY OF COMPLEX DEFECTS IN SI - THE DIVACANCY AND THE E-CENTER

被引:13
作者
FAZZIO, A
LEITE, JR
CALDAS, MJ
机构
来源
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词
D O I
10.1016/0378-4363(83)90232-2
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:90 / 94
页数:5
相关论文
共 19 条
[1]   STUDIES OF DEFECTS INTRODUCED BY ELECTRON-IRRADIATION AT 4.2DEGREESK IN P-SILICON BY THERMALLY STIMULATED CAPACITANCE TECHNIQUE [J].
BRABANT, JC ;
PUGNET, M ;
BARBOLLA, J ;
BROUSSEAU, M .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4809-4813
[2]  
Brosious P. R., 1979, I PHYS C SER, V46, P248
[3]   MULTIPLE-SCATTERING X-ALPHA MOLECULAR-CLUSTER MODEL OF COMPLEX DEFECTS IN SEMICONDUCTORS - APPLICATION TO SI-P2 AND SI-P2+ SYSTEMS [J].
CALDAS, MJ ;
LEITE, JR ;
FAZZIO, A .
PHYSICAL REVIEW B, 1982, 25 (04) :2603-2610
[4]  
DEWIT JG, 1975, I PHYS C SER, V23, P178
[5]   ELECTRON-IRRADIATION-INDUCED DIVACANCY IN LIGHTLY DOPED SILICON [J].
EVWARAYE, AO ;
SUN, E .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :3776-3780
[6]  
FAZZIO A, 1979, J PHYS C SOLID STATE, V12, P3469, DOI 10.1088/0022-3719/12/17/018
[7]  
FAZZIO A, 1979, INT J QUANTUM CHEM, V13, P349
[8]   DIRECT OBSERVATION OF PHONONS IN SILICON BY ELECTRIC-FIELD-MODULATED OPTICAL ABSORPTION [J].
FROVA, A ;
HANDLER, P .
PHYSICAL REVIEW LETTERS, 1965, 14 (06) :178-&
[9]   PHOTOEMISSION VALENCE-BAND DENSITIES OF STATES FOR SI, GE, AND GAAS USING SYNCHROTRON RADIATION [J].
GROBMAN, WD ;
EASTMAN, DE .
PHYSICAL REVIEW LETTERS, 1972, 29 (22) :1508-&
[10]   ENERGY-DEPENDENCE OF DEFECT ENERGY-LEVELS IN ELECTRON-IRRADIATED SILICON [J].
KRYNICKI, J ;
BOURGOIN, JC ;
VASSAL, G .
REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (03) :481-484