INFLUENCE OF THE CURRENT-DENSITY AND INTERNAL ELECTRIC-FIELD ON THE EXCLUSION OF EXCESS CARRIERS IN LONG SEMICONDUCTOR SAMPLES

被引：4
作者：
PULTORAK, J
SIKORSKI, S
JUNG, W
机构：
[1] Inst. of Electron Technol.
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 04期
关键词：
D O I：
10.1088/0268-1242/10/4/003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Long, exponentially inhomogeneous germanium structures with two l-h junctions are used as modulators of infrared radiation working in the exclusion regime. An analysis of excess current carrier transport in these structures in conditions of an internal electric field is given. Typical distributions of excess carriers and current-voltage characteristics are calculated and presented.
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页码：395 / 404
页数：10
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