A NEW FUNCTIONAL, RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR (RHET)

被引：193

作者：

YOKOYAMA, N

IMAMURA, K

MUTO, S

HIYAMIZU, S

NISHI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 11期

关键词：

D O I：

10.1143/JJAP.24.L853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L853 / L853

页数：1

共 7 条

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[2] NOVEL REAL-SPACE HOT-ELECTRON TRANSFER DEVICES [J].

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IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) :334-336

[3] SUBPICOSECOND BASE TRANSIT-TIME OBSERVED IN A HOT-ELECTRON TRANSISTOR (HET) [J].

MUTO, S ;

IMAMURA, K ;

YOKOYAMA, N ;

HIYAMIZU, S ;

NISHI, H .

ELECTRONICS LETTERS, 1985, 21 (13) :555-556

[4] RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE [J].

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COLEMAN, PD ;

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APPLIED PHYSICS LETTERS, 1985, 46 (05) :508-510

[5] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

GOODHUE, WD ;

TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

[6]

YOKOYAMA N, 1984, JPN J APPL PHYS 2, V23, pL311, DOI 10.1143/JJAP.23.L311

[7]

YOKOYAMA N, INT ELECTRON DEVICES, P532

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