VALENCE BAND ENGINEERING IN STRAINED-LAYER STRUCTURES

被引：363
|
作者：
OREILLY, EP
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1989年 / 4卷 / 03期
关键词：
D O I：
10.1088/0268-1242/4/3/001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：121 / 137
页数：17
相关论文
共 50 条
  • [1] SIMULTANEOUS MEASUREMENT OF THE CONDITION AND VALENCE-BAND MASSES IN STRAINED-LAYER STRUCTURES
    JONES, ED
    LYO, SK
    KLEM, JF
    SCHIRBER, JE
    TIGGES, CP
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 243 - 247
  • [2] SIMULTANEOUS MEASUREMENT OF THE CONDITION AND VALENCE-BAND MASSES IN STRAINED-LAYER STRUCTURES
    JONES, ED
    LYO, SK
    KLEM, JF
    SCHIRBER, JE
    TIGGES, CP
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 243 - 247
  • [3] VALENCE-BAND CHARACTERIZATION OF INGAAS GAAS AND GAAS GAASP STRAINED-LAYER STRUCTURES
    JONES, ED
    BIEFELD, RM
    KLEM, JF
    LYO, SK
    OSBOURN, GC
    SURFACE SCIENCE, 1990, 228 (1-3) : 330 - 333
  • [4] MAGNETOOPTIC DETERMINATION OF THE VALENCE BAND MASS IN STRAINED-LAYER SUPERLATTICES
    JONES, ED
    BIEFIELD, RM
    DAWSON, LR
    DRUMMOND, TJ
    FRITZ, IJ
    GOURLEY, PL
    OSBOURN, GC
    SCHIRBER, JE
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 310 - 310
  • [5] VALENCE-BAND OFFSETS AND BAND TAILORING IN COMPOUND STRAINED-LAYER SUPERLATTICES
    KE, SH
    WANG, RZ
    HUANG, MC
    PHYSICAL REVIEW B, 1994, 49 (15): : 10495 - 10501
  • [6] STRAIN AND DENSITY DEPENDENT VALENCE-BAND MASSES IN INGAAS AND GAAS GAASP STRAINED-LAYER STRUCTURES
    JONES, ED
    BIEFIELD, RM
    KLEM, JF
    LYO, SK
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 435 - 440
  • [7] USEFUL DESIGN RELATIONSHIPS FOR THE ENGINEERING OF THERMODYNAMICALLY STABLE STRAINED-LAYER STRUCTURES
    VAWTER, GA
    MYERS, DR
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 4769 - 4773
  • [8] LARGE VALENCE-BAND NONPARABOLICITY AND TAILORABLE HOLE MASSES IN STRAINED-LAYER SUPERLATTICES
    OSBOURN, GC
    SCHIRBER, JE
    DRUMMOND, TJ
    DAWSON, LR
    DOYLE, BL
    FRITZ, IJ
    APPLIED PHYSICS LETTERS, 1986, 49 (12) : 731 - 733
  • [9] BAND-EDGE STATES AND VALENCE-BAND OFFSET OF GAP/INP STRAINED-LAYER SUPERLATTICES
    ARMELLES, G
    MUNOZ, MC
    ALONSO, MI
    PHYSICAL REVIEW B, 1993, 47 (24): : 16299 - 16304
  • [10] VALENCE BAND OFFSETS OF THE INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICE
    SHIRAISHI, K
    OHNO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (04): : L556 - L558
12345