CURRENTS THROUGH THIN FILMS OF ALUMINUM NITRIDE

被引:23
作者
LEWICKI, G
MEAD, CA
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D O I
10.1016/0022-3697(68)90218-7
中图分类号
O6 [化学];
学科分类号
0703 ;
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页码:1255 / &
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共 8 条
[1]  
FLUGGE S, 1956, HANDBUCH PHYSIK ED, V17, P155
[2]  
FRANZ W, 1956, HDB PHYSIK, V17, P155
[3]  
KEFFER F, 1957, J CHEM PHYS, V7, P675
[4]  
LEWICKI G, THESIS
[5]  
LEWICKI GW, 1966, PHYS REV LETT, V16, P21
[6]   THE FORMATION OF METAL OXIDE FILMS USING GASEOUS AND SOLID ELECTROLYTES [J].
MILES, JL ;
SMITH, PH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) :1240-1245
[7]   ENERGY GAPS OF III-V AND (RARE EARTH)-V SEMICONDUCTORS [J].
SCLAR, N .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) :2999-&
[8]   EFFECT OF NONPARABOLIC ENERGY BANDS ON TUNNELING THROUGH THIN INSULATING FILMS [J].
STRATTON, R ;
LEWICKI, G ;
MEAD, CA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) :1599-&