VALLEY SPLITTING IN AN N-CHANNEL (100) INVERSION LAYER ON P-TYPE SILICON

被引：44

作者：

OHKAWA, FJ ^{[1
]}

UEMURA, Y ^{[1
]}

机构：

[1] UNIV TOKYO,FAC SCI,DEPT PHYS,TOKYO 113,JAPAN

来源：

SURFACE SCIENCE | 1976年 / 58卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90147-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：254 / 260

页数：7

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[5] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].

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[9]

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