STUDY OF HOT ELECTRONS IN SEMICONDUCTORS WITH AID OF FEILD ELECTRON EMISSION

被引:8
作者
NEUMANN, H
机构
来源
ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE | 1968年 / A 23卷 / 02期
关键词
D O I
10.1515/zna-1968-0202
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:204 / &
相关论文
共 26 条
[13]  
Lindemann FA, 1910, PHYS Z, V11, P609
[14]   PHOTOSENSITIVE FIELD ELECTRON EMISSION FROM IN2S3 [J].
NEUMANN, H .
PHYSICA STATUS SOLIDI, 1967, 20 (01) :K33-&
[15]  
NEUMANN H, 1967, Z NATURFORSCH, VA 22, P1012
[16]   FIELD DEPENDENCE OF MOBILITY IN SEMICONDUCTORS [J].
PARANJAPE, BV .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (06) :628-629
[17]   INFRARED LATTICE VIBRATION STUDIES OF POLAR CHARACTER IN COMPOUND SEMICONDUCTORS [J].
PICUS, G ;
BURSTEIN, E ;
HENVIS, BW ;
HASS, M .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :282-285
[18]  
PRIOR AC, 1958, J ELECTRON CONTR, V4, P165
[19]   ON CONDUCTION MECHANISM IN SINGLE CRYSTAL BETA-INDIUM SULFIDE IN2S3 [J].
REHWALD, W ;
HARBEKE, G .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (08) :1309-&
[20]  
SCHERBAKOV GP, 1964, FIZ TVERD TELA, V4, P3526