SIMULATION ON THE GROUND WAFER SHAPE IN WAFER ROTATIONAL GRINDING

被引:2
作者
Tang, Keyan [1 ]
Kang, Renke [2 ]
机构
[1] Chengdu Univ Technol, Engn & Tech Coll, Automat Engn Dept, Leshan 614007, Sichuan, Peoples R China
[2] Dalian Univ Technol, Minist Educ, Key Lab Precis & Nontradit Machining Technol, Dalian 116023, Liaoning, Peoples R China
关键词
Silicon wafers; rotational grinding; wafer shape; simulation; ultra-precision; grinding;
D O I
10.1142/S0219686711002120
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
During the wafer rotational grinding, the wafer is located on a porous ceramic vacuum chuck, so there are many factors that can affect the wafer shape in the process of the wafer grinding. The wafer shape has an important influence on the surface quality of the silicon wafer and it will be greatly different if the processing parameters are different. So in this paper, based on a mathematics model of the ground wafer shape which has been developed, a simulation system of the wafer shape was made out by using Visual C++ and OpenGL. The relationship between the parameters and the wafer shape was researched and analyzed. The simulation results showed that the roll angle and the pitch angle had the greatest impact on the wafer shape. And the simulation results with different parameters have been compared with each other for the final conclusions. So the results demonstrate the mathematics model is reasonable and the simulation system is of high simulating accuracy, and the ground wafer shape can be predicted very well by it. The research results are significant to logically choose the wafer grinding parameters and effectively control the ground wafer shape.
引用
收藏
页码:175 / 182
页数:8
相关论文
共 10 条
[1]   Fine grinding of silicon wafers: a mathematical model for the chuck shape [J].
Chidambaram, S ;
Pei, ZJ ;
Kassir, S .
INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE, 2003, 43 (07) :739-746
[2]   Investigation on the dressing shape of vacuum chuck in wafer rotation grinding [J].
Gao, H ;
Tian, YB ;
Jia, ZY ;
Kang, RK .
ADVANCES IN ABRASIVE TECHNOLOGY VIII, 2005, 291-292 :171-176
[3]  
Gaulhofer E., 2000, IEMT EUROPE 2000 S, V1, P154
[4]  
Guo D. M., 2003, WORLD MANUFACTURING, P35
[5]   The 300 mm silicon wafer - a cost and technology challenge [J].
Hahn, PO .
MICROELECTRONIC ENGINEERING, 2001, 56 (1-2) :3-13
[6]  
MATSUI S, 1988, B JPN SOC PREC ENG, V22, P295
[7]   Modeling on the Ground Wafer Shape in Wafer Rotational Grinding [J].
Tang, Keyan ;
Kang, Renke .
ADVANCED MECHANICAL ENGINEERING, PTS 1 AND 2, 2010, 26-28 :694-+
[8]  
Tonshoff H.K., 1990, CIRP ANN-MANUF TECHN, V39, P621, DOI [10.1016/S0007-8506(07)62999-0, DOI 10.1016/S0007-8506(07)62999-0]
[9]   A study of the total thickness variation in the grinding of ultra-precision substrates [J].
Tso, PL ;
Teng, CC .
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2001, 116 (2-3) :182-188
[10]   Three-dimensional kinematical analyses for surface grinding of large scale substrate [J].
Zhou, LB ;
Shimizu, J ;
Shinohara, K ;
Eda, H .
PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY, 2003, 27 (02) :175-184