Intrinsic fi-Ga2O3 and Zn-doped beta-Ga2O3 films were prepared using RF magnetron sputtering. The effects of the Zn doping and thermal annealing on the structural and optical properties are investigated. In comparison with the intrinsic beta-Ga2O3 films, the microstructure, optical transmittance, optical absorption, optical energy gap, and photoluminescence of Zn-doped beta-Ga2O3 films change significantly. The post-annealed beta-Ga2O3 films are polycrystalline. After Zn doping, the crystallization deteriorates, the optical band gap shrinks, the transmittance decreases and the UV, blue, and green emission bands are enhanced.
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Washington State Univ, Inst Mat Res, Pullman, WA 99164 USA
Washington State Univ, Mat Sci & Engn Program, Pullman, WA 99164 USAWashington State Univ, Inst Mat Res, Pullman, WA 99164 USA
Jesenovec, Jani
Varley, Joel
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Lawrence Livermore Natl Lab, Livermore, CA 94450 USAWashington State Univ, Inst Mat Res, Pullman, WA 99164 USA
Varley, Joel
Karcher, Samuel E.
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Washington State Univ, Mat Sci & Engn Program, Pullman, WA 99164 USAWashington State Univ, Inst Mat Res, Pullman, WA 99164 USA
Karcher, Samuel E.
McCloy, John S.
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Washington State Univ, Inst Mat Res, Pullman, WA 99164 USA
Washington State Univ, Mat Sci & Engn Program, Pullman, WA 99164 USAWashington State Univ, Inst Mat Res, Pullman, WA 99164 USA