Structural and optical properties of Zn-doped beta-Ga2O3 films

被引:28
|
作者
Yue Wei [1 ]
Yan Jinliang [1 ]
Wu Jiangyan [1 ]
Zhang Liying [1 ]
机构
[1] Ludong Univ, Sch Phys, Yantai 264025, Peoples R China
基金
中国国家自然科学基金;
关键词
transparent conductive oxides; Zn-doped beta-Ga2O3; optical transmittance; optical band gap; photoluminescence;
D O I
10.1088/1674-4926/33/7/073003
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Intrinsic fi-Ga2O3 and Zn-doped beta-Ga2O3 films were prepared using RF magnetron sputtering. The effects of the Zn doping and thermal annealing on the structural and optical properties are investigated. In comparison with the intrinsic beta-Ga2O3 films, the microstructure, optical transmittance, optical absorption, optical energy gap, and photoluminescence of Zn-doped beta-Ga2O3 films change significantly. The post-annealed beta-Ga2O3 films are polycrystalline. After Zn doping, the crystallization deteriorates, the optical band gap shrinks, the transmittance decreases and the UV, blue, and green emission bands are enhanced.
引用
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页数:4
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