DIFFUSION LENGTH DETERMINATION IN N+-P-P+ STRUCTURE BASED SILICON SOLAR-CELLS FROM THE INTENSITY DEPENDENCE OF THE SHORT-CIRCUIT CURRENT FOR ILLUMINATION FROM THE P+ SIDE

被引：12
作者：
JAIN, GC
SINGH, SN
KOTNALA, RK
机构：
来源：
SOLAR CELLS | 1983年 / 8卷 / 03期
关键词：
D O I：
10.1016/0379-6787(83)90063-7
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
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页码：239 / 248
页数：10
相关论文
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