CARRIER CAPTURE AND RELAXATION IN NARROW QUANTUM-WELLS

In separate confined heterostructure (SCH) lasers, injected electrons and holes thermalize into a quantum well after diffusion through the outer cladding layers. The carriers move towards equilibrium by emitting optical phonons. In narrow quantum wells, as compared to the 1-2 ps required in bulk semi-conductors, this phonon emission process can be considerably slowed down due to the 2-D density of states and the nature of the electron-optical phonon interaction. This process has been studied theoretically using a Monte Carlo program which allows us to see the carrier distribution as a function of time. Typical times for carrier relaxation are 10-15 ps for a 50 angstrom GaAs well with Al0.30Ga0.70As barriers and approximately 5 ps for a 200 angstrom well. These calculations have been complemented by time-resolved photoluminescence measurements on SCH structures where the relaxation time from a 3D distribution into In0.20Ga0.80As/GaAs wells is measured at T = 200 K. Carrier relaxation times of 50, 41, 22, and 17 ps are obtained for wells of sizes 30, 40, 50, and 100 angstrom, respectively. The results show clearly that the use of narrow quantum wells in low threshold lasers will pose a serious limitation to the efficiency and small-signal modulation bandwidth of these devices.