ALL-NB THIN-FILM MICROBRIDGE-TYPE JOSEPHSON-JUNCTION FOR SUBMILLIMETER-WAVE DETECTION

被引：0
|
作者：
HIROSE, N
HARADA, Y
SEKINE, M
YOSHIMORI, S
KAWAMURA, M
机构：
[1] Department of Applied Electronics, Tokyo Institute of Technology, Midori-ku, Yokohama, 227
来源：
INFRARED PHYSICS | 1993年 / 34卷 / 05期
关键词：
D O I：
10.1016/0020-0891(93)90078-L
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A copolymer of methyl methacrylate (MMA) and 3-triethoxysilylpropyl methacrylate (ESPMA) was proposed as a positive-working electron beam (EB) resist of a new type. It was found that it had 4-10 times the resistance of polymethylmethacrylate (PMMA) against CBrF3 plasma damage. The mechanism of etching Nb in reactive-ion-etching (RIE) was deciphered. Using the new EB resist and nanometer process technology, an all-Nb thin film microbridge was fabricated. It shows the a.c. Josephson effect, i.e. the Shapiro steps upto the 11th were observed under millimeter-wave (70 GHz) radiation. In addition the coherently Working performance of the series array of these thin-film microbridges were observed definitively.
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页码：445 / 455
页数：11
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