COMPARATIVE-STUDY OF THE EFFECT OF ANNEALING OF NITROGEN-IMPLANTED SILICON-ON-INSULATOR STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY, CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY AND RUTHERFORD BACKSCATTERING SPECTROSCOPY

被引:6
作者
LOHNER, T
SKORUPA, W
FRIED, M
VEDAM, K
NGUYEN, N
GROTZSCHEL, R
BARTSCH, H
GYULAI, J
机构
[1] PENN STATE UNIV,MAT RES LAB,UNIV PK,PA 16802
[2] ZENT INST KERNFORSCH ROSSENDORF,O-8051 DRESDEN,GERMANY
[3] INST SOLID STATE PHYS & ELECTRON MICROSCOPY,O-4010 HALLE,GERMANY
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 12卷 / 1-2期
基金
匈牙利科学研究基金会;
关键词
D O I
10.1016/0921-5107(92)90282-E
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of post implantation high temperature annealing of 330 keV nitrogen-implanted silicon-on-insulator (SOI) structures was investigated by spectroscopic ellipsometry (SE). The implantation was performed at a dose of 1.2 x 10(18) N+ cm-2 at 500-degrees-C into <100> silicon. The samples were annealed after implantation at different temperatures and times: 1000-degrees-C, 2 h; 1100-degrees-C, 2 h; 1200-degrees-C, 0.5 h; 1200-degrees-C, 2 h; 1200-degrees-C, 5 h; 1250-degrees-C, 0.5 h; 1300-degrees-C, 0.5 h. From the SE spectra the quality of the nitride layer was evaluated. The dependence of the features of the interfaces on the annealing time and temperature were followed with the help of a multilayer optical model and least-squares fit. The results were supported by cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy (RBS) channeling investigations.
引用
收藏
页码:177 / 184
页数:8
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