GROWTH OF EPITAXIAL-FILMS OF CDTE AND (CD,MN)TE ON GAAS SUBSTRATES

被引：19

作者：

SIEGRIST, T ^{[1
]}

SEGMULLER, A ^{[1
]}

MARIETTE, H ^{[1
]}

HOLTZBERG, F ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 20期

关键词：

D O I：

10.1063/1.96920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1395 / 1397

页数：3

共 19 条

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APPLIED PHYSICS LETTERS, 1984, 44 (09) :898-900

[12] X-RAY TOTAL-EXTERNAL-REFLECTION-BRAGG DIFFRACTION - STRUCTURAL STUDY OF THE GAAS-AL INTERFACE [J].

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[13] MOLECULAR-BEAM EPITAXY OF CDTE AND HG1-XCDXTE ON GAAS (100) [J].

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JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) :619-635

[14] HIGH-RESOLUTION ELECTRON-MICROSCOPE STUDY OF EPITAXIAL CDTE-GAAS INTERFACES [J].

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KOLODZIEJSKI, LA ;

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DATTA, S ;

BICKNELL, RN ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :860-862

[15] X-RAY-DIFFRACTION STUDY OF A ONE-DIMENSIONAL GAAS-ALAS SUPERLATTICE [J].

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ESAKI, L .

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[16]

SEGMULLER A, 1986, ADV XRAY ANAL, V29, P353

[17]

Stankiewicz J., 1980, Journal of the Physical Society of Japan, V49, P827

[18]

STANKIEWICZ J, 1980, P INT C SEMICONDUCTO

[19] REFLECTIVITY SPECTRA OF CD1-XMNXTE,ZN1-XMNXS AND ZN1-XMNXSE IN THE 0.7-8.1EV ENERGY-RANGE [J].

ZIMNALSTARNAWSKA, M ;

PODGORNY, M ;

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ZMIJA, J .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (04) :615-621

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