GROWTH OF EPITAXIAL-FILMS OF CDTE AND (CD,MN)TE ON GAAS SUBSTRATES

被引：19
作者：
SIEGRIST, T [1 ]
SEGMULLER, A [1 ]
MARIETTE, H [1 ]
HOLTZBERG, F [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 20期
关键词：
D O I：
10.1063/1.96920
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1395 / 1397
页数：3
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共 19 条
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