TIW SILICIDE-GATE TECHNOLOGY FOR SELF-ALIGNED GAAS-FET

被引：6

作者：

GILL, SS

PRYCE, GJ

WOODWARD, J

机构：

来源：

PHYSICA B & C | 1985年 / 129卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(85)90617-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：430 / 434

页数：5

共 9 条

[1]

ANDERSON WT, 1983, P MATERIALS RES SOC, V18, P57

[2]

GILL SS, 1983, DEC C GALL ARS INT C

[3]

KOHN E, 1979, IEDM, P775

[4] CHARACTERIZATION OF WSIX/GAAS SCHOTTKY CONTACTS [J].

OHNISHI, T ;

YOKOYAMA, N ;

ONODERA, H ;

SUZUKI, S ;

SHIBATOMI, A .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :600-602

[5] HIGH-SPEED LOGIC AT 300-K WITH SELF-ALIGNED SUBMICROMETER-GATE GAAS-MESFETS [J].

SADLER, RA ;

EASTMAN, LF .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) :215-217

[6]

Sze S. M., 1981, PHYSICS SEMICONDUCTO, p[279, 245]

[7] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS [J].

YAMASAKI, K ;

ASAI, K ;

MIZUTANI, T ;

KURUMADA, K .

ELECTRONICS LETTERS, 1982, 18 (03) :119-121

[8] A GAAS 1K STATIC RAM USING TUNGSTEN SILICIDE GATE SELF-ALIGNED TECHNOLOGY [J].

YOKOYAMA, N ;

OHNISHI, T ;

ONODERA, H ;

SHINOKI, T ;

SHIBATOMI, A ;

ISHIKAWA, H .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (05) :520-524

[9] TIW SILICIDE GATE SELF-ALIGNMENT TECHNOLOGY FOR ULTRAHIGH-SPEED GAAS-MESFET LSI VLSIS [J].

YOKOYAMA, N ;

OHNISHI, T ;

ODANI, K ;

ONODERA, H ;

ABE, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) :1541-1547

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