TRANSIENT PHOTOCONDUCTIVITY IN N-TYPE A-SI-H

[1] BEYER W, 1984, SEMICONDUCTORS SEM C, V21, P258

[2] EFFECT OF AN ENERGY-DEPENDENT CAPTURE CROSS-SECTION ON THE MULTIPLE-TRAPPING MODEL OF DISPERSIVE TRANSPORT [J]. PHYSICAL REVIEW B, 1984, 29 (08): : 4505 - 4507

[3] DETERMINATION OF THE EXTENDED-STATE ELECTRON-MOBILITY IN A-SI [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (02): : L13 - L18

[4] DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (05) : 371 - 374

[5] ANOMALOUS SURFACE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLID STATE COMMUNICATIONS, 1983, 47 (06) : 435 - 438

[6] ENERGY-DEPENDENCE OF THE CARRIER MOBILITY-LIFETIME PRODUCT IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4861 - 4871

[7] TRANSIENT PHOTOCURRENTS IN A-SI-H AND WEAK ELECTRON PHONON COUPLING PROCESSES [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (03): : 273 - 283

[8] EFFECT OF RECOMBINATION ON TRANSIENT PHOTOCONDUCTIVITY IN A-SI-H [J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4714 - 4716

[9] ELECTRON-DRIFT MOBILITY IN AMORPHOUS SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (01): : 51 - 60

[10] CARRIER DIFFUSION IN AMORPHOUS-SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1983, 46 (10) : 1235 - 1282

[1] BEYER W, 1984, SEMICONDUCTORS SEM C, V21, P258

[2] EFFECT OF AN ENERGY-DEPENDENT CAPTURE CROSS-SECTION ON THE MULTIPLE-TRAPPING MODEL OF DISPERSIVE TRANSPORT [J]. PHYSICAL REVIEW B, 1984, 29 (08): : 4505 - 4507

[3] DETERMINATION OF THE EXTENDED-STATE ELECTRON-MOBILITY IN A-SI [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (02): : L13 - L18

[4] DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (05) : 371 - 374

[5] ANOMALOUS SURFACE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLID STATE COMMUNICATIONS, 1983, 47 (06) : 435 - 438

[6] ENERGY-DEPENDENCE OF THE CARRIER MOBILITY-LIFETIME PRODUCT IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4861 - 4871

[7] TRANSIENT PHOTOCURRENTS IN A-SI-H AND WEAK ELECTRON PHONON COUPLING PROCESSES [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (03): : 273 - 283

[8] EFFECT OF RECOMBINATION ON TRANSIENT PHOTOCONDUCTIVITY IN A-SI-H [J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4714 - 4716

[9] ELECTRON-DRIFT MOBILITY IN AMORPHOUS SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (01): : 51 - 60

[10] CARRIER DIFFUSION IN AMORPHOUS-SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1983, 46 (10) : 1235 - 1282