DESIGN CONSIDERATIONS FOR IMPROVING LOW-TEMPERATURE NOISE PERFORMANCE OF SILICON JFETS

被引：5
|
作者：
HASLETT, JW [1 ]
KENDALL, EJM [1 ]
SCHOLZ, FJ [1 ]
机构：
[1] UNIV CALGARY, DEPT ELECT ENGN, CALGARY, ALBERTA, CANADA
来源：
SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 02期
关键词：
D O I：
10.1016/0038-1101(75)90103-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：199 / 207
页数：9
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