COMPARISON OF SEMICONDUCTING PROPERTIES OF THIN-FILMS OF SILICON ON SAPPHIRE AND SPINEL

被引：15

作者：

CULLEN, GW ^{[1
]}

CORBOY, JF ^{[1
]}

机构：

[1] RCA,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 10期

关键词：

D O I：

10.1149/1.2401684

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1345 / 1350

页数：6

共 29 条

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[2]

BOLEKY EJ, 1970, ELECTRONICS 0720, P82

[3] SILICON-ON-SAPPHIRE EPITAXY BY VACUUM SUBLIMATION - LEED-AUGER STUDIES AND ELECTRONIC PROPERTIES OF FILMS [J].

CHANG, CC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (03) :500-&

[4]

CULLEN CW, 1971, J CRYSTAL GROWTH, V9, P107

[5] SILICON ON SPINEL - INTERACTION BETWEEN DEPOSITION CONSTITUENTS AND SUBSTRATE SURFACE [J].

CULLEN, GW ;

DOUGHERTY, FC .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :230-+

[6] COMPARISON OF HOLE MOBILITY AND EARLY GROWTH OF EPITAXIAL SILICON ON FLAME FUSION, FLUX, AND CZOCHRALSKI SPINEL [J].

CULLEN, GW ;

WANG, CC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :640-&

[7] EPITAXIAL GROWTH AND PROPERTIES OF SILICON ON ALUMINA-RICH SINGLE-CRYSTAL SPINEL [J].

CULLEN, GW ;

GOTTLIEB, GE ;

WANG, CC ;

ZAININGER, KH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (10) :1444-+

[8]

CULLEN GW, TO BE PUBLISHED

[9]

CULLEN GW, 1973, CHEMICAL VAPOR DEPOS, P247

[10]

Dumin D. J., 1968, Journal of Crystal Growth, V3-4, P214, DOI 10.1016/0022-0248(68)90133-4

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