POLARIZATION CONDUCTIVITY IN P-TYPE GERMANIUM

被引:92
作者
GOLIN, S
机构
来源
PHYSICAL REVIEW | 1963年 / 132卷 / 01期
关键词
D O I
10.1103/PhysRev.132.178
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:178 / &
相关论文
共 13 条
[1]  
BIEREND DH, 1939, NOUVELLES TABLES DIN, P43
[2]  
BUSCH G, 1946, HELV PHYS ACTA, V19, P463
[3]   TRANSMUTATION-PRODUCED GERMANIUM SEMICONDUCTORS [J].
CLELAND, JW ;
LARKHOROVITZ, K ;
PIGG, JC .
PHYSICAL REVIEW, 1950, 78 (06) :814-815
[4]   IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM [J].
FRITZSCHE, H ;
CUEVAS, M .
PHYSICAL REVIEW, 1960, 119 (04) :1238-1245
[5]   THE RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J].
HUNG, CS ;
GLIESSMAN, JR .
PHYSICAL REVIEW, 1950, 79 (04) :726-727
[6]   THEORY OF ACCEPTOR LEVELS IN GERMANIUM [J].
KOHN, W ;
SCHECHTER, D .
PHYSICAL REVIEW, 1955, 99 (06) :1903-1904
[7]   LINEAR-SYSTEM INTEGRAL TRANSFORM RELATIONS [J].
MACDONALD, JR ;
BRACHMAN, MK .
REVIEWS OF MODERN PHYSICS, 1956, 28 (04) :393-422
[8]   IMPURITY CONDUCTION AT LOW CONCENTRATIONS [J].
MILLER, A ;
ABRAHAMS, E .
PHYSICAL REVIEW, 1960, 120 (03) :745-755
[9]  
MILLER AB, UNPUBLISHED
[10]   ON THE TRANSITION TO METALLIC CONDUCTION IN SEMICONDUCTORS [J].
MOTT, NF .
CANADIAN JOURNAL OF PHYSICS, 1956, 34 (12) :1356-1368