MASKLESS ETCHING OF A NANOMETER STRUCTURE BY FOCUSED ION-BEAMS

被引:52
作者
KOMURO, M
HIROSHIMA, H
TANOUE, H
KANAYAMA, T
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期
关键词
D O I
10.1116/1.582719
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:985 / 989
页数:5
相关论文
共 12 条
[1]   FIELD-ION EMISSION FROM LIQUID-TIN [J].
DIXON, A ;
COLLIEX, C ;
OHANA, R ;
SUDRAUD, P ;
VANDEWALLE, J .
PHYSICAL REVIEW LETTERS, 1981, 46 (13) :865-868
[2]   SIMPLIFIED ANALYSIS OF POINT-CATHODE ELECTRON SOURCES [J].
EVERHART, TE .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :4944-&
[3]   TAPERED WINDOWS IN SIO2, SI3N4, AND POLYSILICON LAYERS BY ION-IMPLANTATION [J].
GOTZLICH, J ;
RYSSEL, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :617-619
[4]  
KANAYAMA T, 1979, IECE SSD31 TECHN REP, P29
[5]  
KNAUER W, 1981, OPTIK, V59, P335
[6]   ION-BEAM EXPOSURE APPARATUS USING A LIQUID-METAL SOURCE [J].
KOMURO, M .
THIN SOLID FILMS, 1982, 92 (1-2) :155-164
[7]   FIELD-EMISSION LIQUID-METAL ION-SOURCE AND TRIODE ION GUN [J].
KOMURO, M ;
KAWAKATSU, H .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2642-2645
[8]  
KOMURO M, 1983, 10TH P INT C EL ION
[9]  
KOMURO M, 1982, 6TH P S ISIAT 82, P63
[10]  
KOMURO M, UNPUB APPL PHYS LETT