PHOTO-LUMINESCENCE AND PHOTO-LUMINESCENCE EXCITATION SPECTROSCOPY OF THE EL2 EMISSION BAND IN GAAS

被引：28
作者：
SHANABROOK, BV
KLEIN, PB
SWIGGARD, EM
BISHOP, SG
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 01期
关键词：
D O I：
10.1063/1.331706
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：336 / 340
页数：5
相关论文
共 24 条
[1]   ENERGY-DEPENDENT CAPTURE CROSS SECTIONS AND PHOTOLUMINESCENCE EXCITATION SPECTRA OF GALLIUM PHOSPHIDE ABOVE THRESHOLD FOR INTRINSIC INTERBAND ABSORPTION [J].
DEAN, PJ .
PHYSICAL REVIEW, 1968, 168 (03) :889-+
[2]  
DEVEAUD B, 1979, I PHYS C SER, V45, P492
[3]   OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J].
EAGLES, DM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :76-83
[4]   STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].
HOLMES, DE ;
CHEN, RT ;
ELLIOTT, KR ;
KIRKPATRICK, CG .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48
[5]   DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J].
HUBER, AM ;
LINH, NT ;
VALLADON, M ;
DEBRUN, JL ;
MARTIN, GM ;
MITONNEAU, A ;
MIRCEA, A .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4022-4026
[6]  
JOHNSON EJ, 1982, APPL PHYS LETT, V40, P11
[7]   ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].
LAGOWSKI, J ;
GATOS, HC ;
PARSEY, JM ;
WADA, K ;
KAMINSKA, M ;
WALUKIEWICZ, W .
APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344
[8]   QUENCHING EFFECT OF LUMINESCENCE IN BULK SEMI-INSULATING GAAS [J].
LEYRAL, P ;
VINCENT, G ;
NOUAILHAT, A ;
GUILLOT, G .
SOLID STATE COMMUNICATIONS, 1982, 42 (01) :67-69
[9]  
LEYRAL P, 1982, UNPUB
[10]  
LEYRAL P, COMMUNICATION
123