GROWTH OF HIGH-QUALITY EPITAXIAL CDXHG1-XTE FILMS BY SPUTTER DEPOSITION

被引:10
作者
ROUSSILLE, R
GUILLOT, S
LEFEUVRE, G
机构
关键词
D O I
10.1016/0022-0248(82)90313-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
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页码:130 / 134
页数:5
相关论文
共 9 条
[1]  
COHENSOLAL G, 1974, JAPAN J APPL PHY 1 S, V2, P517
[2]  
CORNELY RH, 1981, SPIE P, V285, P107
[3]  
DUPUY M, COMMUNICATION
[4]   CDXHG1-XTE FILMS BY CATHODIC SPUTTERING [J].
KRAUS, H ;
PARKER, SG ;
SMITH, JP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (06) :616-&
[5]  
KRIKORIAN E, 1980, SPIE, V244, P13
[7]  
ROUSSILLE R, 1981, 4TH INT C PHYS NARR
[8]  
Runyan W.R, 1975, SEMICONDUCTOR MEASUR
[9]  
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