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- [3] TIME-RESOLVED CONDUCTANCE AND REFLECTANCE MEASUREMENTS OF SILICON DURING PULSED-LASER ANNEALINGPHYSICAL REVIEW B, 1983, 27 (02): : 1079 - 1087GALVIN, GJTHOMPSON, MOMAYER, JWPEERCY, PSHAMMOND, RBPAULTER, N
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- [6] TIME-RESOLVED OPTICAL MEASUREMENT OF SI LATTICE TEMPERATURE DURING NANOSECOND PULSED LASER ANNEALINGPHYSICA B & C, 1983, 117 (MAR): : 1024 - 1026MURAKAMI, KITOH, HTAKITA, KMASUDA, K
- [7] TIME-RESOLVED OPTICAL-TRANSMISSION DURING PULSED-LASER ANNEALING OF ION-IMPLANTED AMORPHOUS SILICON-ON-SAPPHIRESOLID STATE COMMUNICATIONS, 1982, 41 (06) : 461 - 463KOTANI, HYAMADA, MYAMAMOTO, KABE, K
- [8] TIME RESOLVED MEASUREMENTS DURING PULSED LASER IRRADIATION OF SILICONSEMICONDUCTORS AND SEMIMETALS, 1984, 23 (0C) : 313 - 404LOWNDES, DHJELLISON, GE
- [9] INCORPORATION OF OXYGEN INTO SILICON DURING PULSED-LASER IRRADIATIONJAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L375 - L378HOH, KKOYAMA, HUDA, KMIURA, Y
- [10] PULSED-LASER MELTING OF AMORPHOUS-SILICON - TIME-RESOLVED MEASUREMENTS AND MODEL-CALCULATIONSPHYSICAL REVIEW LETTERS, 1984, 52 (07) : 561 - 564LOWNDES, DHWOOD, RFNARAYAN, J