CHARACTERIZATION OF VAPOR-DEPOSITED TIN-DOPED INDIUM OXIDE-FILMS

被引：13

作者：

ENLOE, JH ^{[1
]}

WIRTZ, GP ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT CERAM ENGN,URBANA,IL 61801

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期

关键词：

D O I：

10.1149/1.2108972

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1583 / 1587

页数：5

共 14 条

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[3] MEASUREMENT AND REGULATION OF OXYGEN-CONTENT IN SELECTED GASES USING SOLID ELECTROLYTE CELLS .2. DIFFERENTIAL GAUGE [J].

FOULETIER, J ;

SEINERA, H ;

KLEITZ, M .

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[4] MEASUREMENT AND REGULATION OF OXYGEN-CONTENT IN SELECTED GASES USING SOLID ELECTROLYTE CELLS .1. DISCONTINUOUS USE OF GAUGES [J].

FOULETIER, J ;

SEINERA, H ;

KLEITZ, M .

JOURNAL OF APPLIED ELECTROCHEMISTRY, 1974, 4 (04) :305-315

[5] ELECTRICAL-PROPERTIES AND DEFECT MODEL OF TIN-DOPED INDIUM OXIDE LAYERS [J].

FRANK, G ;

KOSTLIN, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (04) :197-206

[6]

ISENBERG AO, 1977, ELECTROCHEMICAL SOC, V771, P963

[7]

KELLOGG HH, 1966, T METALL SOC AIME, V236, P602

[8]

RAPP RA, 1972, Patent No. 3699032

[9]

SVERDRUP EV, 1969, ADV CHEM SER, V90, P301

[10]

van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1

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